Toward surround gates on vertical single-walled carbon nanotube devices
نویسندگان
چکیده
The one-dimensional, cylindrical nature of single-walled carbon nanotubes SWCNTs suggests that the ideal gating geometry for nanotube field-effect transistors FETs is a surround gate SG . Using vertical SWCNTs templated in porous anodic alumina, SGs are formed using top-down processes for the dielectric/metal depositions and definition of the channel length. Surround gates allow aggressive scaling of the channel to 25% of the length attainable with a bottom-gate geometry without incurring short-channel effects. The process demonstrated here for forming SGs on vertical SWCNTs is amenable for large-scale fabrication of multinanotube FETs. © 2009 American Vacuum Society. DOI: 10.1116/1.3054266
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